Low Resistive Copper Thin Film Deposited with Ultra-high Purity Target and Ecr-ion Beam Sputtering
نویسندگان
چکیده
A thin film process using ECR-ion beam sputtering with ultra pure (99.999999%) copper target was investigated for improving transportation properties in the film. The electric resistivity of the thin film was 40% lower than that of using a commercial-grade purity target. And the optical qualities evaluated by the transmission and reflection spectrum measurements were also indicate slower relaxation characteristics of the free carriers. These results evidenced the efficacy of the target purity for defects/impurity less copper thin film.
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